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NumberTypeStyleVbe(sat)Vce(sat)hFEVceoVcboVeboVce(max)Vcb(max)Vbe(max)Ic(max)Ic maxData Sheet
BC337NPNCBE1.2v0.7v100 (@100mA)45v50v5v800 mAhttps://www.onsemi.com/pub/Collateral/BC337-D.PDF
BC327PNPCBE


-45v
-5v-800mA
2N2222NPNEBC


30v60v5v800mA
2N2907PNPEBC


-40v-60v-5v-600mA
2N3904NPNEBC


40v60v6v200mA
2N3906PNPEBC


-40v-40v-5v200mA
S8050NPNEBC


20v30v5v700mA
S8550PNPEBC


-25v-40v-5v-700mA
C1815NPNEBC


50v60v5v150mA
A1015PNPEBC


-50v-50v
-150mA
S9013NPNEBC


25v45v5v500mA
S9012PNPEBC


25v40v5v-500mA
S9014NPNEBC


45v50v5v100mA

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Style
EBC

CBECollector, Base, Emitter

Calculating your Rb Value

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Ic = Vcc/RL = 12v/155Ω = 78mA

Vb = 3.3v - Vbe(sat) = 3.3 - 1.2 = 2.1v

Calculating using Ib=Ic/10

It is common to assume that base current is 1/10 of the collector current.

Ib = Ic/10 = 78/10 = 7.8mA

Rb = Vb/Ib = 2.1/0.0078 = 269 Ω

Tested with 220 Ω and it worked.

Calculating using hFE

To guarantee that the transistor operates in the saturation region, we multiply the base current by a factor of three.

hFE=100 (@100mA)

Ib = Ic/Hfe = 78/100 = 0.78mA

Rb = Vb/Ibx3 = 2.1/(0.00078x3) =  897 Ω

Calculating using the online calculator

See reference

hFE=100

Rb = 960 Ω 

Why are these all so different??? I gues it would work from 200 to 1KΩ.

References